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SE12DB-M3/I

SE12DB-M3/I

For Reference Only

Part Number SE12DB-M3/I
PNEDA Part # SE12DB-M3-I
Description DIODE GEN PURP 100V 3.2A TO263AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,066
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SE12DB-M3/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberSE12DB-M3/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
SE12DB-M3/I, SE12DB-M3/I Datasheet (Total Pages: 5, Size: 108.44 KB)
PDFSE12DJHM3/I Datasheet Cover
SE12DJHM3/I Datasheet Page 2 SE12DJHM3/I Datasheet Page 3 SE12DJHM3/I Datasheet Page 4 SE12DJHM3/I Datasheet Page 5

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SE12DB-M3/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, eSMP®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)3.2A
Voltage - Forward (Vf) (Max) @ If1.15V @ 12A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)3µs
Current - Reverse Leakage @ Vr20µA @ 100V
Capacitance @ Vr, F90pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device PackageTO-263AC (SMPD)
Operating Temperature - Junction-55°C ~ 175°C

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Voltage - Forward (Vf) (Max) @ If

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

10µA @ 50V

Capacitance @ Vr, F

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Mounting Type

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Package / Case

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Supplier Device Package

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

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Reverse Recovery Time (trr)

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Capacitance @ Vr, F

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Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-65°C ~ 150°C

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