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SE12DD-M3/I

SE12DD-M3/I

For Reference Only

Part Number SE12DD-M3/I
PNEDA Part # SE12DD-M3-I
Description DIODE GEN PURP 400V 3.2A TO263AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,394
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SE12DD-M3/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberSE12DD-M3/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
SE12DD-M3/I, SE12DD-M3/I Datasheet (Total Pages: 5, Size: 108.44 KB)
PDFSE12DJHM3/I Datasheet Cover
SE12DJHM3/I Datasheet Page 2 SE12DJHM3/I Datasheet Page 3 SE12DJHM3/I Datasheet Page 4 SE12DJHM3/I Datasheet Page 5

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SE12DD-M3/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, eSMP®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)3.2A
Voltage - Forward (Vf) (Max) @ If1.15V @ 12A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)3µs
Current - Reverse Leakage @ Vr20µA @ 200V
Capacitance @ Vr, F90pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device PackageTO-263AC (SMPD)
Operating Temperature - Junction-55°C ~ 175°C

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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