SE20PAG-M3/I
For Reference Only
| Part Number | SE20PAG-M3/I |
| PNEDA Part # | SE20PAG-M3-I |
| Description | DIODE GEN PURP 400V 1.6A DO220AA |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,646 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SE20PAG-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | SE20PAG-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SE20PAG-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, eSMP® |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Current - Average Rectified (Io) | 1.6A |
| Voltage - Forward (Vf) (Max) @ If | 1.05V @ 2A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 1.2µs |
| Current - Reverse Leakage @ Vr | 5µA @ 400V |
| Capacitance @ Vr, F | 13pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-220AA |
| Supplier Device Package | DO-220AA (SMP) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 8500V Current - Average Rectified (Io) 3040A Voltage - Forward (Vf) (Max) @ If - Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100mA @ 8500V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AE Supplier Device Package - Operating Temperature - Junction -40°C ~ 160°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 12A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 12A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 190µA @ 650V Capacitance @ Vr, F 360pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2 Operating Temperature - Junction -55°C ~ 175°C |
