SF1608GHC0G
For Reference Only
| Part Number | SF1608GHC0G |
| PNEDA Part # | SF1608GHC0G |
| Description | DIODE GEN PURP 600V 16A TO220AB |
| Manufacturer | Taiwan Semiconductor Corporation |
| Unit Price | Request a Quote |
| In Stock | 7,362 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SF1608GHC0G Resources
| Brand | Taiwan Semiconductor Corporation |
| ECAD Module |
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| Mfr. Part Number | SF1608GHC0G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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SF1608GHC0G Specifications
| Manufacturer | Taiwan Semiconductor Corporation |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 16A |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 10µA @ 600V |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 950mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 35ns Current - Reverse Leakage @ Vr 5µA @ 50V Capacitance @ Vr, F 10pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package Sub SMA Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 1.5A Voltage - Forward (Vf) (Max) @ If 550mV @ 1.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 40V Capacitance @ Vr, F 170pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case 0603 (1608 Metric) Supplier Device Package CST2C Operating Temperature - Junction 125°C (Max) |
