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SGB02N120ATMA1

SGB02N120ATMA1

For Reference Only

Part Number SGB02N120ATMA1
PNEDA Part # SGB02N120ATMA1
Description IGBT 1200V 6.2A 62W TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGB02N120ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSGB02N120ATMA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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SGB02N120ATMA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)6.2A
Current - Collector Pulsed (Icm)9.6A
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 2A
Power - Max62W
Switching Energy220µJ
Input TypeStandard
Gate Charge11nC
Td (on/off) @ 25°C23ns/260ns
Test Condition800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

350µJ (on), 825µJ (off)

Input Type

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Gate Charge

102nC

Td (on/off) @ 25°C

46ns/185ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 32A

Power - Max

200W

Switching Energy

600µJ (off)

Input Type

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Gate Charge

110nC

Td (on/off) @ 25°C

25ns/100ns

Test Condition

480V, 32A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

50ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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158nC

Td (on/off) @ 25°C

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Test Condition

400V, 50A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

320A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

4.95mJ (on), 2.78mJ (off)

Input Type

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Gate Charge

215nC

Td (on/off) @ 25°C

29ns/192ns

Test Condition

600V, 80A, 2Ohm, 15V

Reverse Recovery Time (trr)

420ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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TO-264-3, TO-264AA

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

HB

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power - Max

283W

Switching Energy

200µJ (on), 410µJ (off)

Input Type

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Gate Charge

210nC

Td (on/off) @ 25°C

40ns/142ns

Test Condition

400V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Package / Case

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Supplier Device Package

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