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SGH10N60RUFDTU

SGH10N60RUFDTU

For Reference Only

Part Number SGH10N60RUFDTU
PNEDA Part # SGH10N60RUFDTU
Description IGBT 600V 16A 75W TO3P
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,264
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGH10N60RUFDTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSGH10N60RUFDTU
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
SGH10N60RUFDTU, SGH10N60RUFDTU Datasheet (Total Pages: 8, Size: 598.6 KB)
PDFSGH10N60RUFDTU Datasheet Cover
SGH10N60RUFDTU Datasheet Page 2 SGH10N60RUFDTU Datasheet Page 3 SGH10N60RUFDTU Datasheet Page 4 SGH10N60RUFDTU Datasheet Page 5 SGH10N60RUFDTU Datasheet Page 6 SGH10N60RUFDTU Datasheet Page 7 SGH10N60RUFDTU Datasheet Page 8

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SGH10N60RUFDTU Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)16A
Current - Collector Pulsed (Icm)30A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 10A
Power - Max75W
Switching Energy141µJ (on), 215µJ (off)
Input TypeStandard
Gate Charge30nC
Td (on/off) @ 25°C15ns/36ns
Test Condition300V, 10A, 20Ohm, 15V
Reverse Recovery Time (trr)60ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Operating Temperature

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 25A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

TO-247-3 Variant

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

1.91V @ 15V, 10A

Power - Max

101W

Switching Energy

29µJ (on), 200µJ (off)

Input Type

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Gate Charge

21nC

Td (on/off) @ 25°C

27ns/79ns

Test Condition

400V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

62ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Supplier Device Package

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IRG7PG35UPBF

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Power - Max

210W

Switching Energy

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Input Type

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Gate Charge

85nC

Td (on/off) @ 25°C

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Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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