SGP6N60UFDTU
For Reference Only
| Part Number | SGP6N60UFDTU |
| PNEDA Part # | SGP6N60UFDTU |
| Description | IGBT 600V 6A 30W TO220 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,418 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 31 - Jun 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SGP6N60UFDTU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | SGP6N60UFDTU |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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SGP6N60UFDTU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 6A |
| Current - Collector Pulsed (Icm) | 25A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 3A |
| Power - Max | 30W |
| Switching Energy | 57µJ (on), 25µJ (off) |
| Input Type | Standard |
| Gate Charge | 15nC |
| Td (on/off) @ 25°C | 15ns/60ns |
| Test Condition | 300V, 3A, 80Ohm, 15V |
| Reverse Recovery Time (trr) | 52ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 188A Current - Collector Pulsed (Icm) 490A Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 100A Power - Max 1150W Switching Energy 6.5mJ (on), 2.9mJ (off) Input Type Standard Gate Charge 270nC Td (on/off) @ 25°C 32ns/123ns Test Condition 600V, 100A, 1Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264 (IXYK) |
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