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SGTB11N60R2DT4G

SGTB11N60R2DT4G

For Reference Only

Part Number SGTB11N60R2DT4G
PNEDA Part # SGTB11N60R2DT4G
Description RC2 IGBT 10A 600V DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGTB11N60R2DT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSGTB11N60R2DT4G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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SGTB11N60R2DT4G Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)-
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic-
Power - Max-
Switching Energy-
Input Type-
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Current - Collector Pulsed (Icm)

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

227µJ (on), 100µJ (off)

Input Type

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Gate Charge

79nC

Td (on/off) @ 25°C

20.8ns/102ns

Test Condition

400V, 15A, 4.7Ohm, 15V

Reverse Recovery Time (trr)

34.6ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

25nC

Td (on/off) @ 25°C

31ns/83ns

Test Condition

400V, 12A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

20ns/66ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

107ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

140µJ (on), 120µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

40ns/87ns

Test Condition

480V, 5A, 100Ohm, 15V

Reverse Recovery Time (trr)

28ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

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