SGTB11N60R2DT4G
For Reference Only
| Part Number | SGTB11N60R2DT4G |
| PNEDA Part # | SGTB11N60R2DT4G |
| Description | RC2 IGBT 10A 600V DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,608 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SGTB11N60R2DT4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | SGTB11N60R2DT4G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
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SGTB11N60R2DT4G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | - |
| Power - Max | - |
| Switching Energy | - |
| Input Type | - |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 120A Current - Collector Pulsed (Icm) 240A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 60A Power - Max 333W Switching Energy 227µJ (on), 100µJ (off) Input Type Standard Gate Charge 79nC Td (on/off) @ 25°C 20.8ns/102ns Test Condition 400V, 15A, 4.7Ohm, 15V Reverse Recovery Time (trr) 34.6ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
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