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SGW30N60HSFKSA1

SGW30N60HSFKSA1

For Reference Only

Part Number SGW30N60HSFKSA1
PNEDA Part # SGW30N60HSFKSA1
Description IGBT 600V 41A 250W TO247-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,606
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SGW30N60HSFKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSGW30N60HSFKSA1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
SGW30N60HSFKSA1, SGW30N60HSFKSA1 Datasheet (Total Pages: 12, Size: 356.55 KB)
PDFSGW30N60HSFKSA1 Datasheet Cover
SGW30N60HSFKSA1 Datasheet Page 2 SGW30N60HSFKSA1 Datasheet Page 3 SGW30N60HSFKSA1 Datasheet Page 4 SGW30N60HSFKSA1 Datasheet Page 5 SGW30N60HSFKSA1 Datasheet Page 6 SGW30N60HSFKSA1 Datasheet Page 7 SGW30N60HSFKSA1 Datasheet Page 8 SGW30N60HSFKSA1 Datasheet Page 9 SGW30N60HSFKSA1 Datasheet Page 10 SGW30N60HSFKSA1 Datasheet Page 11

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SGW30N60HSFKSA1 Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)41A
Current - Collector Pulsed (Icm)112A
Vce(on) (Max) @ Vge, Ic3.15V @ 15V, 30A
Power - Max250W
Switching Energy1.15mJ
Input TypeStandard
Gate Charge141nC
Td (on/off) @ 25°C20ns/250ns
Test Condition400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

57nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

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Power - Max

200W

Switching Energy

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Input Type

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170nC

Td (on/off) @ 25°C

50ns/180ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

320A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

260W

Switching Energy

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Input Type

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Gate Charge

420nC

Td (on/off) @ 25°C

-/360ns

Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

IHW30N60TFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

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Power - Max

187W

Switching Energy

770µJ

Input Type

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Gate Charge

167nC

Td (on/off) @ 25°C

23ns/254ns

Test Condition

400V, 30A, 10.6Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

FGB3245G2-F085

ON Semiconductor

Manufacturer

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Series

Automotive, AEC-Q101, EcoSPARK®

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

450V

Current - Collector (Ic) (Max)

23A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

1.25V @ 4V, 6A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

23nC

Td (on/off) @ 25°C

900ns/5.4µs

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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