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SI1002R-T1-GE3

SI1002R-T1-GE3

For Reference Only

Part Number SI1002R-T1-GE3
PNEDA Part # SI1002R-T1-GE3
Description MOSFET N-CH 30V 610MA SC75A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1002R-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1002R-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1002R-T1-GE3, SI1002R-T1-GE3 Datasheet (Total Pages: 8, Size: 187.58 KB)
PDFSI1002R-T1-GE3 Datasheet Cover
SI1002R-T1-GE3 Datasheet Page 2 SI1002R-T1-GE3 Datasheet Page 3 SI1002R-T1-GE3 Datasheet Page 4 SI1002R-T1-GE3 Datasheet Page 5 SI1002R-T1-GE3 Datasheet Page 6 SI1002R-T1-GE3 Datasheet Page 7 SI1002R-T1-GE3 Datasheet Page 8

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SI1002R-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C610mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs560mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds36pF @ 15V
FET Feature-
Power Dissipation (Max)220mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-75A
Package / CaseSC-75A

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