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SI1016CX-T1-GE3

SI1016CX-T1-GE3

For Reference Only

Part Number SI1016CX-T1-GE3
PNEDA Part # SI1016CX-T1-GE3
Description MOSFET N/P-CH 20V SC89-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,142,076
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1016CX-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1016CX-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1016CX-T1-GE3, SI1016CX-T1-GE3 Datasheet (Total Pages: 12, Size: 236.22 KB)
PDFSI1016CX-T1-GE3 Datasheet Cover
SI1016CX-T1-GE3 Datasheet Page 2 SI1016CX-T1-GE3 Datasheet Page 3 SI1016CX-T1-GE3 Datasheet Page 4 SI1016CX-T1-GE3 Datasheet Page 5 SI1016CX-T1-GE3 Datasheet Page 6 SI1016CX-T1-GE3 Datasheet Page 7 SI1016CX-T1-GE3 Datasheet Page 8 SI1016CX-T1-GE3 Datasheet Page 9 SI1016CX-T1-GE3 Datasheet Page 10 SI1016CX-T1-GE3 Datasheet Page 11

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SI1016CX-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs396mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds43pF @ 10V
Power - Max220mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

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