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SI1023X-T1-GE3

SI1023X-T1-GE3

For Reference Only

Part Number SI1023X-T1-GE3
PNEDA Part # SI1023X-T1-GE3
Description MOSFET 2P-CH 20V 0.37A SC89-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,108
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1023X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1023X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1023X-T1-GE3, SI1023X-T1-GE3 Datasheet (Total Pages: 7, Size: 140.72 KB)
PDFSI1023X-T1-E3 Datasheet Cover
SI1023X-T1-E3 Datasheet Page 2 SI1023X-T1-E3 Datasheet Page 3 SI1023X-T1-E3 Datasheet Page 4 SI1023X-T1-E3 Datasheet Page 5 SI1023X-T1-E3 Datasheet Page 6 SI1023X-T1-E3 Datasheet Page 7

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SI1023X-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C370mA
Rds On (Max) @ Id, Vgs1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

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