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SI1033X-T1-E3

SI1033X-T1-E3

For Reference Only

Part Number SI1033X-T1-E3
PNEDA Part # SI1033X-T1-E3
Description MOSFET 2P-CH 20V 0.145A SOT563F
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1033X-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1033X-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1033X-T1-E3, SI1033X-T1-E3 Datasheet (Total Pages: 5, Size: 78.95 KB)
PDFSI1033X-T1-E3 Datasheet Cover
SI1033X-T1-E3 Datasheet Page 2 SI1033X-T1-E3 Datasheet Page 3 SI1033X-T1-E3 Datasheet Page 4 SI1033X-T1-E3 Datasheet Page 5

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SI1033X-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C145mA
Rds On (Max) @ Id, Vgs8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSC-89-6

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Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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