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SI1062X-T1-GE3

SI1062X-T1-GE3

For Reference Only

Part Number SI1062X-T1-GE3
PNEDA Part # SI1062X-T1-GE3
Description MOSFET N-CH 20V SC-89
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 282,324
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1062X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1062X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1062X-T1-GE3, SI1062X-T1-GE3 Datasheet (Total Pages: 8, Size: 158.98 KB)
PDFSI1062X-T1-GE3 Datasheet Cover
SI1062X-T1-GE3 Datasheet Page 2 SI1062X-T1-GE3 Datasheet Page 3 SI1062X-T1-GE3 Datasheet Page 4 SI1062X-T1-GE3 Datasheet Page 5 SI1062X-T1-GE3 Datasheet Page 6 SI1062X-T1-GE3 Datasheet Page 7 SI1062X-T1-GE3 Datasheet Page 8

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SI1062X-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.7nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds43pF @ 10V
FET Feature-
Power Dissipation (Max)220mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-3
Package / CaseSC-89, SOT-490

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