Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1073X-T1-E3

SI1073X-T1-E3

For Reference Only

Part Number SI1073X-T1-E3
PNEDA Part # SI1073X-T1-E3
Description MOSFET P-CH 30V 0.98A SC89-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,310
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1073X-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1073X-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1073X-T1-E3, SI1073X-T1-E3 Datasheet (Total Pages: 6, Size: 88.86 KB)
PDFSI1073X-T1-E3 Datasheet Cover
SI1073X-T1-E3 Datasheet Page 2 SI1073X-T1-E3 Datasheet Page 3 SI1073X-T1-E3 Datasheet Page 4 SI1073X-T1-E3 Datasheet Page 5 SI1073X-T1-E3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI1073X-T1-E3 Datasheet
  • where to find SI1073X-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI1073X-T1-E3
  • SI1073X-T1-E3 PDF Datasheet
  • SI1073X-T1-E3 Stock

  • SI1073X-T1-E3 Pinout
  • Datasheet SI1073X-T1-E3
  • SI1073X-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI1073X-T1-E3 Price
  • SI1073X-T1-E3 Distributor

SI1073X-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs173mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds265pF @ 15V
FET Feature-
Power Dissipation (Max)236mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666

The Products You May Be Interested In

IPI90N06S4L04AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRFD9210PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 240mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

APT60N60SCSG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 44A, 10V

Vgs(th) (Max) @ Id

3.9V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7200pF @ 25V

FET Feature

Super Junction

Power Dissipation (Max)

431W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D3Pak

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STP9NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

5.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2180pF @ 25V

FET Feature

-

Power Dissipation (Max)

166W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

TL072ID

TL072ID

STMicroelectronics

IC OPAMP JFET 2 CIRCUIT 8SO

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

ADM3202ARUZ

ADM3202ARUZ

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

MBRS340T3G

MBRS340T3G

ON Semiconductor

DIODE SCHOTTKY 40V 4A SMC

APT1608F3C

APT1608F3C

Kingbright

EMITTER IR 940NM 50MA 603

MCP23017-E/SO

MCP23017-E/SO

Microchip Technology

IC I/O EXPANDER I2C 16B 28SOIC

FSAM30SH60A

FSAM30SH60A

ON Semiconductor

SMART POWER MODULE 30A SPM32-AA

SMCJ70CA-E3/57T

SMCJ70CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 70V 113V DO214AB

74FCT3807SOGI

74FCT3807SOGI

IDT, Integrated Device Technology

IC CLK BUFFER 1:10 100MHZ 20SOIC

MAX8216ESD+

MAX8216ESD+

Maxim Integrated

IC MONITOR VOLT MPU 14-SOIC

MAX238CWG

MAX238CWG

Maxim Integrated

IC TRANSCEIVER FULL 4/4 24SOIC

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5