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SI1077X-T1-GE3

SI1077X-T1-GE3

For Reference Only

Part Number SI1077X-T1-GE3
PNEDA Part # SI1077X-T1-GE3
Description MOSFET P-CH 20V SC89-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 45,288
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1077X-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1077X-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1077X-T1-GE3, SI1077X-T1-GE3 Datasheet (Total Pages: 8, Size: 167.91 KB)
PDFSI1077X-T1-GE3 Datasheet Cover
SI1077X-T1-GE3 Datasheet Page 2 SI1077X-T1-GE3 Datasheet Page 3 SI1077X-T1-GE3 Datasheet Page 4 SI1077X-T1-GE3 Datasheet Page 5 SI1077X-T1-GE3 Datasheet Page 6 SI1077X-T1-GE3 Datasheet Page 7 SI1077X-T1-GE3 Datasheet Page 8

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SI1077X-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs78mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31.1nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds965pF @ 10V
FET Feature-
Power Dissipation (Max)330mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-89-6
Package / CaseSOT-563, SOT-666

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