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SI1300BDL-T1-GE3

SI1300BDL-T1-GE3

For Reference Only

Part Number SI1300BDL-T1-GE3
PNEDA Part # SI1300BDL-T1-GE3
Description MOSFET N-CH 20V 400MA SC-70-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 18 - May 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1300BDL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1300BDL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1300BDL-T1-GE3, SI1300BDL-T1-GE3 Datasheet (Total Pages: 6, Size: 110.43 KB)
PDFSI1300BDL-T1-GE3 Datasheet Cover
SI1300BDL-T1-GE3 Datasheet Page 2 SI1300BDL-T1-GE3 Datasheet Page 3 SI1300BDL-T1-GE3 Datasheet Page 4 SI1300BDL-T1-GE3 Datasheet Page 5 SI1300BDL-T1-GE3 Datasheet Page 6

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SI1300BDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs850mOhm @ 250mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.84nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds35pF @ 10V
FET Feature-
Power Dissipation (Max)190mW (Ta), 200mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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