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SI1302DL-T1-GE3

SI1302DL-T1-GE3

For Reference Only

Part Number SI1302DL-T1-GE3
PNEDA Part # SI1302DL-T1-GE3
Description MOSFET N-CH 30V 600MA SC-70-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 280,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1302DL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1302DL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1302DL-T1-GE3, SI1302DL-T1-GE3 Datasheet (Total Pages: 9, Size: 217.34 KB)
PDFSI1302DL-T1-GE3 Datasheet Cover
SI1302DL-T1-GE3 Datasheet Page 2 SI1302DL-T1-GE3 Datasheet Page 3 SI1302DL-T1-GE3 Datasheet Page 4 SI1302DL-T1-GE3 Datasheet Page 5 SI1302DL-T1-GE3 Datasheet Page 6 SI1302DL-T1-GE3 Datasheet Page 7 SI1302DL-T1-GE3 Datasheet Page 8 SI1302DL-T1-GE3 Datasheet Page 9

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SI1302DL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)280mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-3
Package / CaseSC-70, SOT-323

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