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SI1308EDL-T1-GE3

SI1308EDL-T1-GE3 SI1308EDL-T1-GE3

For Reference Only

Part Number SI1308EDL-T1-GE3
PNEDA Part # SI1308EDL-T1-GE3
Description MOSFET N-CH 30V 1.4A SOT323
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,223,676
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 23 - May 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1308EDL-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1308EDL-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1308EDL-T1-GE3, SI1308EDL-T1-GE3 Datasheet (Total Pages: 11, Size: 255.7 KB)
PDFSI1308EDL-T1-GE3 Datasheet Cover
SI1308EDL-T1-GE3 Datasheet Page 2 SI1308EDL-T1-GE3 Datasheet Page 3 SI1308EDL-T1-GE3 Datasheet Page 4 SI1308EDL-T1-GE3 Datasheet Page 5 SI1308EDL-T1-GE3 Datasheet Page 6 SI1308EDL-T1-GE3 Datasheet Page 7 SI1308EDL-T1-GE3 Datasheet Page 8 SI1308EDL-T1-GE3 Datasheet Page 9 SI1308EDL-T1-GE3 Datasheet Page 10 SI1308EDL-T1-GE3 Datasheet Page 11

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SI1308EDL-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs132mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.1nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds105pF @ 15V
FET Feature-
Power Dissipation (Max)400mW (Ta), 500mW (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-323
Package / CaseSC-70, SOT-323

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