Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI1405BDH-T1-GE3

SI1405BDH-T1-GE3

For Reference Only

Part Number SI1405BDH-T1-GE3
PNEDA Part # SI1405BDH-T1-GE3
Description MOSFET P-CH 8V 1.6A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 23 - Jun 28 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1405BDH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1405BDH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1405BDH-T1-GE3, SI1405BDH-T1-GE3 Datasheet (Total Pages: 6, Size: 110.87 KB)
PDFSI1405BDH-T1-E3 Datasheet Cover
SI1405BDH-T1-E3 Datasheet Page 2 SI1405BDH-T1-E3 Datasheet Page 3 SI1405BDH-T1-E3 Datasheet Page 4 SI1405BDH-T1-E3 Datasheet Page 5 SI1405BDH-T1-E3 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI1405BDH-T1-GE3 Datasheet
  • where to find SI1405BDH-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI1405BDH-T1-GE3
  • SI1405BDH-T1-GE3 PDF Datasheet
  • SI1405BDH-T1-GE3 Stock

  • SI1405BDH-T1-GE3 Pinout
  • Datasheet SI1405BDH-T1-GE3
  • SI1405BDH-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI1405BDH-T1-GE3 Price
  • SI1405BDH-T1-GE3 Distributor

SI1405BDH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds305pF @ 4V
FET Feature-
Power Dissipation (Max)1.47W (Ta), 2.27W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

The Products You May Be Interested In

FQAF17P10

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 25V

FET Feature

-

Power Dissipation (Max)

56W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PF

Package / Case

TO-3P-3 Full Pack

TPHR9203PL,L1Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIX-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

2.1V @ 500µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7540pF @ 15V

FET Feature

-

Power Dissipation (Max)

132W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP Advance (5x5)

Package / Case

8-PowerVDFN

STP9NK60ZD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperFREDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1110pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFR3910TRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

115mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 25V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMP2010UFG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

12.7A (Ta), 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

9.5mOhm @ 3.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

103nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

3350pF @ 10V

FET Feature

-

Power Dissipation (Max)

900mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI3333-8

Package / Case

8-PowerVDFN

Recently Sold

LTM4615IV#PBF

LTM4615IV#PBF

Linear Technology/Analog Devices

DC DC CNVRTR 2X0.8-5V 0.4-2.6V

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

SMBJ18CA-E3/52

SMBJ18CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 18V 29.2V DO214AA

LTC1726IS8-2.5#PBF

LTC1726IS8-2.5#PBF

Linear Technology/Analog Devices

IC TRPL SPLY MONITOR 2.5V 8-SOIC

0251007.NRT1L

0251007.NRT1L

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC AXIAL

GS-R424

GS-R424

STMicroelectronics

DC DC CONVERTER 24V 4A

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

IRLML6402TRPBF

IRLML6402TRPBF

Infineon Technologies

MOSFET P-CH 20V 3.7A SOT-23

CM1213-08MR

CM1213-08MR

ON Semiconductor

TVS DIODE 3.3V 8.8V 10MSOP

FSA3157P6X

FSA3157P6X

ON Semiconductor

IC SWITCH MULTIMEDIA SC70-6

64900001039

64900001039

Littelfuse

FUSE BLOCK CART 250V 6.3A PCB

AD8250ARMZ-R7

AD8250ARMZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP