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SI1431DH-T1-GE3

SI1431DH-T1-GE3

For Reference Only

Part Number SI1431DH-T1-GE3
PNEDA Part # SI1431DH-T1-GE3
Description MOSFET P-CH 30V 1.7A SOT363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,568
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1431DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1431DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1431DH-T1-GE3, SI1431DH-T1-GE3 Datasheet (Total Pages: 6, Size: 99.52 KB)
PDFSI1431DH-T1-GE3 Datasheet Cover
SI1431DH-T1-GE3 Datasheet Page 2 SI1431DH-T1-GE3 Datasheet Page 3 SI1431DH-T1-GE3 Datasheet Page 4 SI1431DH-T1-GE3 Datasheet Page 5 SI1431DH-T1-GE3 Datasheet Page 6

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SI1431DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs200mOhm @ 2A, 10V
Vgs(th) (Max) @ Id3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)950mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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