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SI1469DH-T1-GE3

SI1469DH-T1-GE3

For Reference Only

Part Number SI1469DH-T1-GE3
PNEDA Part # SI1469DH-T1-GE3
Description MOSFET P-CH 20V 2.7A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,222
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1469DH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1469DH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI1469DH-T1-GE3, SI1469DH-T1-GE3 Datasheet (Total Pages: 12, Size: 249.06 KB)
PDFSI1469DH-T1-GE3 Datasheet Cover
SI1469DH-T1-GE3 Datasheet Page 2 SI1469DH-T1-GE3 Datasheet Page 3 SI1469DH-T1-GE3 Datasheet Page 4 SI1469DH-T1-GE3 Datasheet Page 5 SI1469DH-T1-GE3 Datasheet Page 6 SI1469DH-T1-GE3 Datasheet Page 7 SI1469DH-T1-GE3 Datasheet Page 8 SI1469DH-T1-GE3 Datasheet Page 9 SI1469DH-T1-GE3 Datasheet Page 10 SI1469DH-T1-GE3 Datasheet Page 11

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SI1469DH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds470pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 2.78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-70-6 (SOT-363)
Package / Case6-TSSOP, SC-88, SOT-363

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