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SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

For Reference Only

Part Number SI1922EDH-T1-GE3
PNEDA Part # SI1922EDH-T1-GE3
Description MOSFET 2N-CH 20V 1.3A SOT-363
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 264,168
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI1922EDH-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI1922EDH-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI1922EDH-T1-GE3, SI1922EDH-T1-GE3 Datasheet (Total Pages: 12, Size: 261.21 KB)
PDFSI1922EDH-T1-GE3 Datasheet Cover
SI1922EDH-T1-GE3 Datasheet Page 2 SI1922EDH-T1-GE3 Datasheet Page 3 SI1922EDH-T1-GE3 Datasheet Page 4 SI1922EDH-T1-GE3 Datasheet Page 5 SI1922EDH-T1-GE3 Datasheet Page 6 SI1922EDH-T1-GE3 Datasheet Page 7 SI1922EDH-T1-GE3 Datasheet Page 8 SI1922EDH-T1-GE3 Datasheet Page 9 SI1922EDH-T1-GE3 Datasheet Page 10 SI1922EDH-T1-GE3 Datasheet Page 11

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SI1922EDH-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.3A
Rds On (Max) @ Id, Vgs198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max1.25W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

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