SI1922EDH-T1-GE3
For Reference Only
| Part Number | SI1922EDH-T1-GE3 |
| PNEDA Part # | SI1922EDH-T1-GE3 |
| Description | MOSFET 2N-CH 20V 1.3A SOT-363 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 264,168 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 1 - May 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI1922EDH-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI1922EDH-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI1922EDH-T1-GE3 Datasheet
- where to find SI1922EDH-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI1922EDH-T1-GE3
- SI1922EDH-T1-GE3 PDF Datasheet
- SI1922EDH-T1-GE3 Stock
- SI1922EDH-T1-GE3 Pinout
- Datasheet SI1922EDH-T1-GE3
- SI1922EDH-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI1922EDH-T1-GE3 Price
- SI1922EDH-T1-GE3 Distributor
SI1922EDH-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 198mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 (SOT-363) |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 5.6A, 3.8A Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 914pF @ 6V Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package U-DFN2020-6 (Type B) |
Manufacturer Microsemi Corporation Series CoolMOS™ FET Type 4 N-Channel (H-Bridge) FET Feature Super Junction Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 59A Rds On (Max) @ Id, Vgs 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 100V Power - Max 462W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
Manufacturer Microsemi Corporation Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 720mOhm @ 10A, 10V Vgs(th) (Max) @ Id 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V Power - Max 520W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP3 Supplier Device Package SP3 |
Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A, 3.5A Rds On (Max) @ Id, Vgs 51mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V Power - Max 27.8W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank Package / Case PowerPAK® 1212-8W Dual Supplier Device Package PowerPAK® 1212-8W Dual |
