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SI2301CDS-T1-GE3

SI2301CDS-T1-GE3 SI2301CDS-T1-GE3

For Reference Only

Part Number SI2301CDS-T1-GE3
PNEDA Part # SI2301CDS-T1-GE3
Description MOSFET P-CH 20V 3.1A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,078,854
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2301CDS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2301CDS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2301CDS-T1-GE3, SI2301CDS-T1-GE3 Datasheet (Total Pages: 9, Size: 197.85 KB)
PDFSI2301CDS-T1-E3 Datasheet Cover
SI2301CDS-T1-E3 Datasheet Page 2 SI2301CDS-T1-E3 Datasheet Page 3 SI2301CDS-T1-E3 Datasheet Page 4 SI2301CDS-T1-E3 Datasheet Page 5 SI2301CDS-T1-E3 Datasheet Page 6 SI2301CDS-T1-E3 Datasheet Page 7 SI2301CDS-T1-E3 Datasheet Page 8 SI2301CDS-T1-E3 Datasheet Page 9

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SI2301CDS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds405pF @ 10V
FET Feature-
Power Dissipation (Max)860mW (Ta), 1.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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