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SI2303CDS-T1-E3

SI2303CDS-T1-E3

For Reference Only

Part Number SI2303CDS-T1-E3
PNEDA Part # SI2303CDS-T1-E3
Description MOSFET P-CH 30V 2.7A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,600
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2303CDS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2303CDS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2303CDS-T1-E3, SI2303CDS-T1-E3 Datasheet (Total Pages: 10, Size: 231.98 KB)
PDFSI2303CDS-T1-E3 Datasheet Cover
SI2303CDS-T1-E3 Datasheet Page 2 SI2303CDS-T1-E3 Datasheet Page 3 SI2303CDS-T1-E3 Datasheet Page 4 SI2303CDS-T1-E3 Datasheet Page 5 SI2303CDS-T1-E3 Datasheet Page 6 SI2303CDS-T1-E3 Datasheet Page 7 SI2303CDS-T1-E3 Datasheet Page 8 SI2303CDS-T1-E3 Datasheet Page 9 SI2303CDS-T1-E3 Datasheet Page 10

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SI2303CDS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs190mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds155pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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