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SI2305ADS-T1-E3

SI2305ADS-T1-E3

For Reference Only

Part Number SI2305ADS-T1-E3
PNEDA Part # SI2305ADS-T1-E3
Description MOSFET P-CH 8V 5.4A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,200
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2305ADS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2305ADS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2305ADS-T1-E3, SI2305ADS-T1-E3 Datasheet (Total Pages: 10, Size: 204.52 KB)
PDFSI2305ADS-T1-E3 Datasheet Cover
SI2305ADS-T1-E3 Datasheet Page 2 SI2305ADS-T1-E3 Datasheet Page 3 SI2305ADS-T1-E3 Datasheet Page 4 SI2305ADS-T1-E3 Datasheet Page 5 SI2305ADS-T1-E3 Datasheet Page 6 SI2305ADS-T1-E3 Datasheet Page 7 SI2305ADS-T1-E3 Datasheet Page 8 SI2305ADS-T1-E3 Datasheet Page 9 SI2305ADS-T1-E3 Datasheet Page 10

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SI2305ADS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs40mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 4V
FET Feature-
Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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