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SI2308DS-T1-E3

SI2308DS-T1-E3

For Reference Only

Part Number SI2308DS-T1-E3
PNEDA Part # SI2308DS-T1-E3
Description MOSFET N-CH 60V 2A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,326
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2308DS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2308DS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2308DS-T1-E3, SI2308DS-T1-E3 Datasheet (Total Pages: 5, Size: 81.82 KB)
PDFSI2308DS-T1-E3 Datasheet Cover
SI2308DS-T1-E3 Datasheet Page 2 SI2308DS-T1-E3 Datasheet Page 3 SI2308DS-T1-E3 Datasheet Page 4 SI2308DS-T1-E3 Datasheet Page 5

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SI2308DS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs160mOhm @ 2A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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