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SI2328DS-T1-E3

SI2328DS-T1-E3

For Reference Only

Part Number SI2328DS-T1-E3
PNEDA Part # SI2328DS-T1-E3
Description MOSFET N-CH 100V 1.15A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 223,536
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2328DS-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2328DS-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2328DS-T1-E3, SI2328DS-T1-E3 Datasheet (Total Pages: 8, Size: 206.42 KB)
PDFSI2328DS-T1-GE3 Datasheet Cover
SI2328DS-T1-GE3 Datasheet Page 2 SI2328DS-T1-GE3 Datasheet Page 3 SI2328DS-T1-GE3 Datasheet Page 4 SI2328DS-T1-GE3 Datasheet Page 5 SI2328DS-T1-GE3 Datasheet Page 6 SI2328DS-T1-GE3 Datasheet Page 7 SI2328DS-T1-GE3 Datasheet Page 8

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SI2328DS-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs250mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)730mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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