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SI2329DS-T1-GE3

SI2329DS-T1-GE3

For Reference Only

Part Number SI2329DS-T1-GE3
PNEDA Part # SI2329DS-T1-GE3
Description MOSFET P-CH 8V 6A SOT-23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 50,736
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2329DS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2329DS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2329DS-T1-GE3, SI2329DS-T1-GE3 Datasheet (Total Pages: 10, Size: 228.34 KB)
PDFSI2329DS-T1-GE3 Datasheet Cover
SI2329DS-T1-GE3 Datasheet Page 2 SI2329DS-T1-GE3 Datasheet Page 3 SI2329DS-T1-GE3 Datasheet Page 4 SI2329DS-T1-GE3 Datasheet Page 5 SI2329DS-T1-GE3 Datasheet Page 6 SI2329DS-T1-GE3 Datasheet Page 7 SI2329DS-T1-GE3 Datasheet Page 8 SI2329DS-T1-GE3 Datasheet Page 9 SI2329DS-T1-GE3 Datasheet Page 10

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SI2329DS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
Vgs (Max)±5V
Input Capacitance (Ciss) (Max) @ Vds1485pF @ 4V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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