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SI2347DS-T1-GE3

SI2347DS-T1-GE3 SI2347DS-T1-GE3

For Reference Only

Part Number SI2347DS-T1-GE3
PNEDA Part # SI2347DS-T1-GE3
Description MOSFET P-CH 30V 5A SOT-23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 260,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 10 - Feb 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2347DS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2347DS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2347DS-T1-GE3, SI2347DS-T1-GE3 Datasheet (Total Pages: 10, Size: 227.51 KB)
PDFSI2347DS-T1-GE3 Datasheet Cover
SI2347DS-T1-GE3 Datasheet Page 2 SI2347DS-T1-GE3 Datasheet Page 3 SI2347DS-T1-GE3 Datasheet Page 4 SI2347DS-T1-GE3 Datasheet Page 5 SI2347DS-T1-GE3 Datasheet Page 6 SI2347DS-T1-GE3 Datasheet Page 7 SI2347DS-T1-GE3 Datasheet Page 8 SI2347DS-T1-GE3 Datasheet Page 9 SI2347DS-T1-GE3 Datasheet Page 10

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SI2347DS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs42mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds705pF @ 15V
FET Feature-
Power Dissipation (Max)1.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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