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SI2367DS-T1-GE3

SI2367DS-T1-GE3

For Reference Only

Part Number SI2367DS-T1-GE3
PNEDA Part # SI2367DS-T1-GE3
Description MOSFET P-CH 20V 3.8A SOT-23
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 22,854
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2367DS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2367DS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2367DS-T1-GE3, SI2367DS-T1-GE3 Datasheet (Total Pages: 10, Size: 240.56 KB)
PDFSI2367DS-T1-GE3 Datasheet Cover
SI2367DS-T1-GE3 Datasheet Page 2 SI2367DS-T1-GE3 Datasheet Page 3 SI2367DS-T1-GE3 Datasheet Page 4 SI2367DS-T1-GE3 Datasheet Page 5 SI2367DS-T1-GE3 Datasheet Page 6 SI2367DS-T1-GE3 Datasheet Page 7 SI2367DS-T1-GE3 Datasheet Page 8 SI2367DS-T1-GE3 Datasheet Page 9 SI2367DS-T1-GE3 Datasheet Page 10

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SI2367DS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds561pF @ 10V
FET Feature-
Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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