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SI3440DV-T1-GE3

SI3440DV-T1-GE3

For Reference Only

Part Number SI3440DV-T1-GE3
PNEDA Part # SI3440DV-T1-GE3
Description MOSFET N-CH 150V 1.2A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 47,070
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3440DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3440DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3440DV-T1-GE3, SI3440DV-T1-GE3 Datasheet (Total Pages: 10, Size: 189.34 KB)
PDFSI3440DV-T1-GE3 Datasheet Cover
SI3440DV-T1-GE3 Datasheet Page 2 SI3440DV-T1-GE3 Datasheet Page 3 SI3440DV-T1-GE3 Datasheet Page 4 SI3440DV-T1-GE3 Datasheet Page 5 SI3440DV-T1-GE3 Datasheet Page 6 SI3440DV-T1-GE3 Datasheet Page 7 SI3440DV-T1-GE3 Datasheet Page 8 SI3440DV-T1-GE3 Datasheet Page 9 SI3440DV-T1-GE3 Datasheet Page 10

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SI3440DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs375mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.14W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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