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SI3443DVTR

SI3443DVTR

For Reference Only

Part Number SI3443DVTR
PNEDA Part # SI3443DVTR
Description MOSFET P-CH 20V 4.4A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,750
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3443DVTR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSI3443DVTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3443DVTR, SI3443DVTR Datasheet (Total Pages: 7, Size: 131.38 KB)
PDFSI3443DV Datasheet Cover
SI3443DV Datasheet Page 2 SI3443DV Datasheet Page 3 SI3443DV Datasheet Page 4 SI3443DV Datasheet Page 5 SI3443DV Datasheet Page 6 SI3443DV Datasheet Page 7

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SI3443DVTR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1079pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(TSOP-6)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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