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SI3483CDV-T1-E3

SI3483CDV-T1-E3

For Reference Only

Part Number SI3483CDV-T1-E3
PNEDA Part # SI3483CDV-T1-E3
Description MOSFET P-CH 30V 8A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 46,968
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3483CDV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3483CDV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3483CDV-T1-E3, SI3483CDV-T1-E3 Datasheet (Total Pages: 11, Size: 228.81 KB)
PDFSI3483CDV-T1-E3 Datasheet Cover
SI3483CDV-T1-E3 Datasheet Page 2 SI3483CDV-T1-E3 Datasheet Page 3 SI3483CDV-T1-E3 Datasheet Page 4 SI3483CDV-T1-E3 Datasheet Page 5 SI3483CDV-T1-E3 Datasheet Page 6 SI3483CDV-T1-E3 Datasheet Page 7 SI3483CDV-T1-E3 Datasheet Page 8 SI3483CDV-T1-E3 Datasheet Page 9 SI3483CDV-T1-E3 Datasheet Page 10 SI3483CDV-T1-E3 Datasheet Page 11

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SI3483CDV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs34mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta), 4.2W (Tc)
Operating Temperature-55°C ~ 150°C (TA)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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