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SI3588DV-T1-E3

SI3588DV-T1-E3

For Reference Only

Part Number SI3588DV-T1-E3
PNEDA Part # SI3588DV-T1-E3
Description MOSFET N/P-CH 20V 2.5A 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3588DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3588DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3588DV-T1-E3, SI3588DV-T1-E3 Datasheet (Total Pages: 8, Size: 123.64 KB)
PDFSI3588DV-T1-GE3 Datasheet Cover
SI3588DV-T1-GE3 Datasheet Page 2 SI3588DV-T1-GE3 Datasheet Page 3 SI3588DV-T1-GE3 Datasheet Page 4 SI3588DV-T1-GE3 Datasheet Page 5 SI3588DV-T1-GE3 Datasheet Page 6 SI3588DV-T1-GE3 Datasheet Page 7 SI3588DV-T1-GE3 Datasheet Page 8

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SI3588DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.5A, 570mA
Rds On (Max) @ Id, Vgs80mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW, 83mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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