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SI3805DV-T1-E3

SI3805DV-T1-E3

For Reference Only

Part Number SI3805DV-T1-E3
PNEDA Part # SI3805DV-T1-E3
Description MOSFET P-CH 20V 3.3A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3805DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3805DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI3805DV-T1-E3, SI3805DV-T1-E3 Datasheet (Total Pages: 14, Size: 233.32 KB)
PDFSI3805DV-T1-E3 Datasheet Cover
SI3805DV-T1-E3 Datasheet Page 2 SI3805DV-T1-E3 Datasheet Page 3 SI3805DV-T1-E3 Datasheet Page 4 SI3805DV-T1-E3 Datasheet Page 5 SI3805DV-T1-E3 Datasheet Page 6 SI3805DV-T1-E3 Datasheet Page 7 SI3805DV-T1-E3 Datasheet Page 8 SI3805DV-T1-E3 Datasheet Page 9 SI3805DV-T1-E3 Datasheet Page 10 SI3805DV-T1-E3 Datasheet Page 11

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SI3805DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs84mOhm @ 3A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.1W (Ta), 1.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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