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SI3900DV-T1-E3

SI3900DV-T1-E3

For Reference Only

Part Number SI3900DV-T1-E3
PNEDA Part # SI3900DV-T1-E3
Description MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 400,056
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3900DV-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3900DV-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3900DV-T1-E3, SI3900DV-T1-E3 Datasheet (Total Pages: 9, Size: 203.04 KB)
PDFSI3900DV-T1-GE3 Datasheet Cover
SI3900DV-T1-GE3 Datasheet Page 2 SI3900DV-T1-GE3 Datasheet Page 3 SI3900DV-T1-GE3 Datasheet Page 4 SI3900DV-T1-GE3 Datasheet Page 5 SI3900DV-T1-GE3 Datasheet Page 6 SI3900DV-T1-GE3 Datasheet Page 7 SI3900DV-T1-GE3 Datasheet Page 8 SI3900DV-T1-GE3 Datasheet Page 9

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SI3900DV-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A
Rds On (Max) @ Id, Vgs125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max830mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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