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SI3932DV-T1-GE3

SI3932DV-T1-GE3

For Reference Only

Part Number SI3932DV-T1-GE3
PNEDA Part # SI3932DV-T1-GE3
Description MOSFET 2N-CH 30V 3.7A 6-TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 817,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI3932DV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI3932DV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI3932DV-T1-GE3, SI3932DV-T1-GE3 Datasheet (Total Pages: 7, Size: 126.34 KB)
PDFSI3932DV-T1-GE3 Datasheet Cover
SI3932DV-T1-GE3 Datasheet Page 2 SI3932DV-T1-GE3 Datasheet Page 3 SI3932DV-T1-GE3 Datasheet Page 4 SI3932DV-T1-GE3 Datasheet Page 5 SI3932DV-T1-GE3 Datasheet Page 6 SI3932DV-T1-GE3 Datasheet Page 7

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SI3932DV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3.7A
Rds On (Max) @ Id, Vgs58mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds235pF @ 15V
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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