Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4090DY-T1-GE3

SI4090DY-T1-GE3

For Reference Only

Part Number SI4090DY-T1-GE3
PNEDA Part # SI4090DY-T1-GE3
Description MOSFET N-CH 100V 19.7A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,490
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 17 - May 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4090DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4090DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4090DY-T1-GE3, SI4090DY-T1-GE3 Datasheet (Total Pages: 9, Size: 204.07 KB)
PDFSI4090DY-T1-GE3 Datasheet Cover
SI4090DY-T1-GE3 Datasheet Page 2 SI4090DY-T1-GE3 Datasheet Page 3 SI4090DY-T1-GE3 Datasheet Page 4 SI4090DY-T1-GE3 Datasheet Page 5 SI4090DY-T1-GE3 Datasheet Page 6 SI4090DY-T1-GE3 Datasheet Page 7 SI4090DY-T1-GE3 Datasheet Page 8 SI4090DY-T1-GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4090DY-T1-GE3 Datasheet
  • where to find SI4090DY-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SI4090DY-T1-GE3
  • SI4090DY-T1-GE3 PDF Datasheet
  • SI4090DY-T1-GE3 Stock

  • SI4090DY-T1-GE3 Pinout
  • Datasheet SI4090DY-T1-GE3
  • SI4090DY-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SI4090DY-T1-GE3 Price
  • SI4090DY-T1-GE3 Distributor

SI4090DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C19.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2410pF @ 50V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

FDMC610P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

3.9mOhm @ 22A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 6V

FET Feature

-

Power Dissipation (Max)

2.4W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Power33

Package / Case

8-PowerTDFN

IPC60R075CPX1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

AUIRFSL4115

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12.1mOhm @ 62A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5270pF @ 50V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FQU5N40TU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

3.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6Ohm @ 1.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

460pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

STB47N60DM6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

FT4232HL-REEL

FT4232HL-REEL

FTDI, Future Technology Devices International Ltd

IC USB HS QUAD UART/SYNC 64-LQFP

FAN3111ESX

FAN3111ESX

ON Semiconductor

IC GATE DVR SGL 1A EXTER SOT23-5

T491D107K016AT

T491D107K016AT

KEMET

CAP TANT 100UF 10% 16V 2917

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

LV8727-E

LV8727-E

ON Semiconductor

IC MTR DRVR BIPOLAR 0V-5V 25HZIP

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD

SMCJ15A-13-F

SMCJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMC

LTST-C191KRKT

LTST-C191KRKT

Lite-On Inc.

LED RED CLEAR SMD

CDSOT23-SM712

CDSOT23-SM712

Bourns

TVS DIODE 7V/12V 14V/26V SOT23-3

SMD050-2

SMD050-2

Littelfuse

PTC RESET FUSE 60V 500MA 2SMD

NTR4171PT1G

NTR4171PT1G

ON Semiconductor

MOSFET P-CH 30V 2.2A SOT23