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SI4101DY-T1-GE3

SI4101DY-T1-GE3

For Reference Only

Part Number SI4101DY-T1-GE3
PNEDA Part # SI4101DY-T1-GE3
Description MOSFET P-CH 30V 25.7A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 40,512
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4101DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4101DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4101DY-T1-GE3, SI4101DY-T1-GE3 Datasheet (Total Pages: 9, Size: 205.34 KB)
PDFSI4101DY-T1-GE3 Datasheet Cover
SI4101DY-T1-GE3 Datasheet Page 2 SI4101DY-T1-GE3 Datasheet Page 3 SI4101DY-T1-GE3 Datasheet Page 4 SI4101DY-T1-GE3 Datasheet Page 5 SI4101DY-T1-GE3 Datasheet Page 6 SI4101DY-T1-GE3 Datasheet Page 7 SI4101DY-T1-GE3 Datasheet Page 8 SI4101DY-T1-GE3 Datasheet Page 9

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SI4101DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs203nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8190pF @ 15V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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