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SI4196DY-T1-GE3

SI4196DY-T1-GE3

For Reference Only

Part Number SI4196DY-T1-GE3
PNEDA Part # SI4196DY-T1-GE3
Description MOSFET N-CH 20V 8A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,220
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4196DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4196DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4196DY-T1-GE3, SI4196DY-T1-GE3 Datasheet (Total Pages: 7, Size: 111.37 KB)
PDFSI4196DY-T1-E3 Datasheet Cover
SI4196DY-T1-E3 Datasheet Page 2 SI4196DY-T1-E3 Datasheet Page 3 SI4196DY-T1-E3 Datasheet Page 4 SI4196DY-T1-E3 Datasheet Page 5 SI4196DY-T1-E3 Datasheet Page 6 SI4196DY-T1-E3 Datasheet Page 7

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SI4196DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs27mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds830pF @ 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 4.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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