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SI4200DY-T1-GE3

SI4200DY-T1-GE3

For Reference Only

Part Number SI4200DY-T1-GE3
PNEDA Part # SI4200DY-T1-GE3
Description MOSFET 2N-CH 25V 8A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,910
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4200DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4200DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4200DY-T1-GE3, SI4200DY-T1-GE3 Datasheet (Total Pages: 9, Size: 182.73 KB)
PDFSI4200DY-T1-GE3 Datasheet Cover
SI4200DY-T1-GE3 Datasheet Page 2 SI4200DY-T1-GE3 Datasheet Page 3 SI4200DY-T1-GE3 Datasheet Page 4 SI4200DY-T1-GE3 Datasheet Page 5 SI4200DY-T1-GE3 Datasheet Page 6 SI4200DY-T1-GE3 Datasheet Page 7 SI4200DY-T1-GE3 Datasheet Page 8 SI4200DY-T1-GE3 Datasheet Page 9

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SI4200DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C8A
Rds On (Max) @ Id, Vgs25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds415pF @ 13V
Power - Max2.8W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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