SI4330DY-T1-GE3
For Reference Only
| Part Number | SI4330DY-T1-GE3 |
| PNEDA Part # | SI4330DY-T1-GE3 |
| Description | MOSFET 2N-CH 30V 6.6A 8-SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 8,136 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SI4330DY-T1-GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SI4330DY-T1-GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SI4330DY-T1-GE3 Datasheet
- where to find SI4330DY-T1-GE3
- Vishay Siliconix
- Vishay Siliconix SI4330DY-T1-GE3
- SI4330DY-T1-GE3 PDF Datasheet
- SI4330DY-T1-GE3 Stock
- SI4330DY-T1-GE3 Pinout
- Datasheet SI4330DY-T1-GE3
- SI4330DY-T1-GE3 Supplier
- Vishay Siliconix Distributor
- SI4330DY-T1-GE3 Price
- SI4330DY-T1-GE3 Distributor
SI4330DY-T1-GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 8.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - FET Type 4 N-Channel (H-Bridge) FET Feature Standard Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 22A Rds On (Max) @ Id, Vgs 420mOhm @ 11A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V Power - Max 390W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case SP4 Supplier Device Package SP4 |
Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4.9A Rds On (Max) @ Id, Vgs 58mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer ON Semiconductor Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.7A Rds On (Max) @ Id, Vgs 70mOhm @ 2.7A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 865pF @ 10V Power - Max 800mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-LSOP (0.130", 3.30mm Width) Supplier Device Package SuperSOT™-8 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 12A Rds On (Max) @ Id, Vgs 10mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V Power - Max 800mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-Power33 (3x3) |
Manufacturer Rohm Semiconductor Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15nC, 26.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 50V Power - Max 3W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerTDFN Supplier Device Package 8-HSOP |
