Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI4396DY-T1-E3

SI4396DY-T1-E3

For Reference Only

Part Number SI4396DY-T1-E3
PNEDA Part # SI4396DY-T1-E3
Description MOSFET N-CH 30V 16A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,302
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4396DY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4396DY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4396DY-T1-E3, SI4396DY-T1-E3 Datasheet (Total Pages: 7, Size: 87.23 KB)
PDFSI4396DY-T1-E3 Datasheet Cover
SI4396DY-T1-E3 Datasheet Page 2 SI4396DY-T1-E3 Datasheet Page 3 SI4396DY-T1-E3 Datasheet Page 4 SI4396DY-T1-E3 Datasheet Page 5 SI4396DY-T1-E3 Datasheet Page 6 SI4396DY-T1-E3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI4396DY-T1-E3 Datasheet
  • where to find SI4396DY-T1-E3
  • Vishay Siliconix

  • Vishay Siliconix SI4396DY-T1-E3
  • SI4396DY-T1-E3 PDF Datasheet
  • SI4396DY-T1-E3 Stock

  • SI4396DY-T1-E3 Pinout
  • Datasheet SI4396DY-T1-E3
  • SI4396DY-T1-E3 Supplier

  • Vishay Siliconix Distributor
  • SI4396DY-T1-E3 Price
  • SI4396DY-T1-E3 Distributor

SI4396DY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs11.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1675pF @ 15V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 5.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

DN2535N3-G-P013

Microchip Technology

Manufacturer

Microchip Technology

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

350V

Current - Continuous Drain (Id) @ 25°C

120mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

25Ohm @ 120mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92 (TO-226)

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

IPL60R065C7AUMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

IRLML2060TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

480mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

0.67nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

64pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

BTS247ZAKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TEMPFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

18mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

90nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1730pF @ 25V

FET Feature

Temperature Sensing Diode

Power Dissipation (Max)

120W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-5-3

Package / Case

TO-220-5 Formed Leads

AOD210

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

MAX3490ESA+T

MAX3490ESA+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 8SOIC

RJR26FW102R

RJR26FW102R

Bourns

TRIMMER 1K OHM 0.25W PC PIN TOP

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

IPS5451S

IPS5451S

Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

MT29F16G08ABACAWP-ITZ:C

MT29F16G08ABACAWP-ITZ:C

Micron Technology Inc.

IC FLASH 16G PARALLEL 48TSOP

EP53A8HQI

EP53A8HQI

Enpirion

DC DC CONVERTER 1.8-3.3V 3W

ISL9205IRZ-T

ISL9205IRZ-T

Renesas Electronics America Inc.

IC CHRGR LI-ION SGL 4.2V 16-QFN

ADV7123KSTZ140

ADV7123KSTZ140

Analog Devices

IC DAC 10BIT A-OUT 48LQFP

HCS3920FTL500

HCS3920FTL500

Stackpole Electronics

RES 500 UOHM 1% 5W 3920

CM200C32768AZFT

CM200C32768AZFT

Citizen Finedevice

CRYSTAL 32.7680KHZ 12.5PF SMD

AD8051ARTZ-R2

AD8051ARTZ-R2

Analog Devices

IC OPAMP VFB 1 CIRCUIT SOT23-5

PI6C49X0204CWIE

PI6C49X0204CWIE

Diodes Incorporated

IC CLOCK BUFFER 1:4 200MHZ 8SOIC