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SI4410DY

SI4410DY

For Reference Only

Part Number SI4410DY
PNEDA Part # SI4410DY
Manufacturer Infineon Technologies
Description MOSFET N-CH 30V 10A 8-SOIC
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 3,672
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

SI4410DY Resources

Brand Infineon Technologies
Mfr. Part NumberSI4410DY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4410DY, SI4410DY Datasheet (Total Pages: 8, Size: 93.77 KB)
PDFSI4410DY Datasheet Cover
SI4410DY Datasheet Page 2 SI4410DY Datasheet Page 3 SI4410DY Datasheet Page 4 SI4410DY Datasheet Page 5 SI4410DY Datasheet Page 6 SI4410DY Datasheet Page 7 SI4410DY Datasheet Page 8

SI4410DY Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1585pF @ 15V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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