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SI4413DDY-T1-GE3

SI4413DDY-T1-GE3

For Reference Only

Part Number SI4413DDY-T1-GE3
PNEDA Part # SI4413DDY-T1-GE3
Description MOSFET P-CHANNEL 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,910
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4413DDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4413DDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SI4413DDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds4780pF @ 15V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 125°C
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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