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SI4435FDY-T1-GE3

SI4435FDY-T1-GE3

For Reference Only

Part Number SI4435FDY-T1-GE3
PNEDA Part # SI4435FDY-T1-GE3
Description MOSFET P-CH 30V 12.6A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,050
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4435FDY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4435FDY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4435FDY-T1-GE3, SI4435FDY-T1-GE3 Datasheet (Total Pages: 7, Size: 186.22 KB)
PDFSI4435FDY-T1-GE3 Datasheet Cover
SI4435FDY-T1-GE3 Datasheet Page 2 SI4435FDY-T1-GE3 Datasheet Page 3 SI4435FDY-T1-GE3 Datasheet Page 4 SI4435FDY-T1-GE3 Datasheet Page 5 SI4435FDY-T1-GE3 Datasheet Page 6 SI4435FDY-T1-GE3 Datasheet Page 7

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SI4435FDY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen III
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs19mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
FET Feature-
Power Dissipation (Max)4.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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