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SI4463BDY-T1-E3

SI4463BDY-T1-E3

For Reference Only

Part Number SI4463BDY-T1-E3
PNEDA Part # SI4463BDY-T1-E3
Description MOSFET P-CH 20V 9.8A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 216,240
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4463BDY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4463BDY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI4463BDY-T1-E3, SI4463BDY-T1-E3 Datasheet (Total Pages: 8, Size: 162.77 KB)
PDFSI4463BDY-T1-GE3 Datasheet Cover
SI4463BDY-T1-GE3 Datasheet Page 2 SI4463BDY-T1-GE3 Datasheet Page 3 SI4463BDY-T1-GE3 Datasheet Page 4 SI4463BDY-T1-GE3 Datasheet Page 5 SI4463BDY-T1-GE3 Datasheet Page 6 SI4463BDY-T1-GE3 Datasheet Page 7 SI4463BDY-T1-GE3 Datasheet Page 8

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SI4463BDY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs11mOhm @ 13.7A, 10V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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