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SI4561DY-T1-E3

SI4561DY-T1-E3

For Reference Only

Part Number SI4561DY-T1-E3
PNEDA Part # SI4561DY-T1-E3
Description MOSFET N/P-CH 40V 6.8A 8-SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 8,460
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4561DY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4561DY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4561DY-T1-E3, SI4561DY-T1-E3 Datasheet (Total Pages: 12, Size: 137.51 KB)
PDFSI4561DY-T1-E3 Datasheet Cover
SI4561DY-T1-E3 Datasheet Page 2 SI4561DY-T1-E3 Datasheet Page 3 SI4561DY-T1-E3 Datasheet Page 4 SI4561DY-T1-E3 Datasheet Page 5 SI4561DY-T1-E3 Datasheet Page 6 SI4561DY-T1-E3 Datasheet Page 7 SI4561DY-T1-E3 Datasheet Page 8 SI4561DY-T1-E3 Datasheet Page 9 SI4561DY-T1-E3 Datasheet Page 10 SI4561DY-T1-E3 Datasheet Page 11

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SI4561DY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C6.8A, 7.2A
Rds On (Max) @ Id, Vgs35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds640pF @ 20V
Power - Max3W, 3.3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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