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SI4618DY-T1-GE3

SI4618DY-T1-GE3

For Reference Only

Part Number SI4618DY-T1-GE3
PNEDA Part # SI4618DY-T1-GE3
Description MOSFET 2N-CH 30V 8A 8SO
Manufacturer Vishay Siliconix
Unit Price
1 ---------- $5.1145
250 ---------- $4.8748
500 ---------- $4.6350
1,000 ---------- $4.3953
2,500 ---------- $4.1955
5,000 ---------- $3.9957
In Stock 9,779
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI4618DY-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI4618DY-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SI4618DY-T1-GE3, SI4618DY-T1-GE3 Datasheet (Total Pages: 14, Size: 205.11 KB)
PDFSI4618DY-T1-GE3 Datasheet Cover
SI4618DY-T1-GE3 Datasheet Page 2 SI4618DY-T1-GE3 Datasheet Page 3 SI4618DY-T1-GE3 Datasheet Page 4 SI4618DY-T1-GE3 Datasheet Page 5 SI4618DY-T1-GE3 Datasheet Page 6 SI4618DY-T1-GE3 Datasheet Page 7 SI4618DY-T1-GE3 Datasheet Page 8 SI4618DY-T1-GE3 Datasheet Page 9 SI4618DY-T1-GE3 Datasheet Page 10 SI4618DY-T1-GE3 Datasheet Page 11

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SI4618DY-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8A, 15.2A
Rds On (Max) @ Id, Vgs17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1535pF @ 15V
Power - Max1.98W, 4.16W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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